GaN Technology Development Engineer
- Location Germany
- Job-type Full time
- Salary Negotiable
- Sector SemiConTech
- Reference PR/005278_1615534320
- Start date ASAP
AutoStream Global...your industry-leading Semiconductor recruitment company. We partner with some of the world´s largest and most recognised businesses to bring Experts on to their major projects. We also work with industry experts...highly educated and qualified professionals who are seeking a career move. We connect the two, and we do it well.
We are working with a client currently, a Semiconductor business with a strong brand reputation, to fulfil a number of positions specifically focused around GaN technology. Within this Business Unit we are looking for a Development Engineer for GaN technologies and products who will:
- Support the development of new FET devices centered around GaN
- Design and perform physical simulations of transistors and test structures
- Create and execute physical analysis & reliability tests
- Lead/oversee R&D projects, including external partner/institution collaboration
To conduct the above duties, your skills and experience will include:
- A strong academic background (ideally to Ph.D level) in the Semiconductor/Electronics field
- Several years of experience in Semiconductor technology development, including a knowledge of Physics in semiconductor devices (focusing on high-frequency applications)
- Previous, proven experience in the wide-bandgap technology, ideally GaN